例句與造句

1. Improvement of 20crni2mo gear carbonization process
   材料齒輪滲碳工藝改進(jìn)
2. Moreover , high quality nanocrystalline p - sic film was attained with the integration of the pre - carbonization process and the substrate bias effect
   進(jìn)一步結(jié)合襯底預(yù)碳化以及對(duì)襯底的偏壓作用，得到了高質(zhì)量的納米? sic薄膜。
3. This thesis reports some results on the hot press sintering of nano - composite wc - co powder , which is prepared by spray pyrogenation & continuous deoxidization and carbonization process
   本課題采用熱壓燒結(jié)技術(shù)對(duì)以噴霧熱解?連續(xù)還原碳化法制備的納米復(fù)合wc - co粉末進(jìn)行了熱壓燒結(jié)研究。
4. This article discuss several effecting factors about pan - base carbon fiber strength . we make emphasis on annlysis the influencing factors of polymerization pro - oxygen carbonization process
   摘要本文分析了碳纖維研發(fā)過程中對(duì)強(qiáng)度的影響因素。著重對(duì)原絲生產(chǎn)、預(yù)氧化過程、碳化過程中的主要影響因素分別進(jìn)行了分析。
5. By increasing the h2 dilution ratio , it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase . from the study on the distance from substrate to catalyzer , choosing a proper distance can ensure the gas fully decomposed , while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes . the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
   實(shí)驗(yàn)結(jié)果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減??；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩(wěn)定結(jié)晶相并去除雜相；選擇適當(dāng)?shù)臒峤z距離能保證反應(yīng)氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；采用分步碳化法可以提高形核密度，有利于獲得高質(zhì)量的納米- sic薄膜；襯底施加負(fù)偏壓可以明顯提高襯底表面的基團(tuán)的活性，因負(fù)偏壓產(chǎn)生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
6. It's difficult to find carbonization process in a sentence. 用carbonization process造句挺難的
7. The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of
   對(duì)于碳化工藝,側(cè)重研究了碳化時(shí)間、反應(yīng)室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對(duì)碳化層質(zhì)量的影響,研究結(jié)果表明:隨著碳化時(shí)間的增長,碳化層的晶粒尺寸隨之變大,表面粗糙度隨之降低,但當(dāng)碳化到一定時(shí)間之后,碳化反應(yīng)減緩,碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應(yīng)室氣壓的升高而變大,適中的反應(yīng)室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對(duì)較小時(shí),碳化層的晶粒尺寸隨氣體流量的變化不明顯,但當(dāng)氣體流量增大到一定程度時(shí),碳化層的晶粒尺寸隨氣體流量的增大而明顯變大,同時(shí),適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時(shí),碳化層的晶粒取向不明顯,隨著碳化溫度的升高,碳化層的晶粒尺寸明顯變大,且有微弱的單晶取向出現(xiàn),但取向較差,同時(shí),適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ,以ch _ 4作為c源氣體時(shí)得到的碳化層表面平整得多;比起si ( 100 ) ,選用si ( 111 )作為基片生長的碳化層的晶粒取向一致性明顯更好。